Abstract
An analytic expression for the photoionization cross section of an impurity atom in an applied field is derived for photon energies below the zero-field photoionization threshold. The use of a quantum defect wave function for the impurity ground state permits impurity atoms to be conveniently characterized in terms of known ground state energies. The Coulomb Green's function and the WKB approximation in parabolic coordinates are used to calculate the wave function of photoexcited electrons or holes from which the photoionization cross section is obtained. The results apply to shallow or deep levels associated with carriers bound to charged impurity centers. Results for photodetachment of carriers bound to neutral impurities are obtained in the limit where the impurity charge goes to zero.
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