Abstract
Photo-induced stress relaxation was measured in amorphous selenium (a-Se) films with an a-Se/mica bimetallic structure. Thermally-induced stresses in these a-Se films were rapidly relaxed by illumination at temperatures from -50°C to room temperature. The photo-induced stress relaxation was approximated by an exponential decay at various levels of light intensity, and the activation energy of the photo-induced stress relaxation is estimated to be of the order of 0.1 eV. This can be explained in terms of the structural relaxation in local atomic rearrangements caused by illumination.
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