Abstract
Pulsed laser deposition technique was employed for the preparation of amorphous As 4Se 3 thin films. Raman scattering spectroscopy and variable angle spectroscopic ellipsometry results revealed reversible photostructural effects and metastable photorefraction in annealed films. Observed photoinduced effects are ascribed to reversible transformation of As 4, As 4Se 3, and As 4Se 4 structural units to AsSe 3, As 2Se 2 and As 3Se entities.
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