Abstract
The effect of a potassium overlayer on nitridation and oxidation of the InP(100) surface is investigated by core‐level and valence‐band photoemission spectroscopy using synchrotron radiation. In comparison with the K‐promoted nitridation of the InP(110) surface obtained by cleavage in situ, we found that the promotive effect for the InP(100) surface cleaned by ions bombardment is much stronger and that the nitridation products consist of two kinds of complexes: InPNx and InPNx+y. The results confirmed that surface defects play an important part in the promotive effect. Furthermore, in contrast with K‐promoted oxidation of InP(100) where bonding is observed between indium and oxygen, indium atoms did not react directly with nitrogen atoms during the K‐promoted nitridation of InP(100).
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