Abstract
Photoemission from quantum wells, inversion layers, quantum well wires, and quantum dots of nonlinear optical materials has been studied using n-CdGeAs<sub>2</sub> as an example. Photoemission was formulated by deducing the dispersion law within the framework of the k-p formalism taking into account all types of anisotropies of the energy band parameters. Photoemission is found to increase with incident photon energy in a ladderlike manner and to exhibit an oscillatory dependence on changing film thickness, surface fields at both high and weak electric field limits, and the carrier density. It is concluded that the numerical values of the photoemission are the greatest in quantum dots and the smallest in bulk specimens.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
