Influence of photon energy on the photoemission from ultrafast electronic materials

Abstract

In this paper, an attempt is made to study the photoemission from quantum well, quantuni wires and q,uantum dots of ultrafast electronic materials taking n-CdGeAs as an example. The above class of materials are being increasingly used in light end.tting diodes. We have formulated the photoernission from the aforeznentioned ultrafast electronic materials by deducing the,new carrier energy spec tra in all c ase s, witbi ri the framework o f k •p. formal Is taking into account various types of anisotropies of the energy band parameters of the said systems. It :I.s found, that the photo emission increases with incident photon energy in a ladder like manner and also exhibits oscillatory dependences with changing film thickne ss and the c arrier density re spec tively for all the cases. The numerical values of the photoeniission is greatest in quantum dots and least in quantum wells. The well-known results have been shown as special cases under certain limiting conditions of our generalized expressions, The theoretical formulations are in agreement with. the experimental observations as reported elsewhere.