Abstract
It has been shown that photoemission curves obtained using the X-ray standing wave technique in grazing-incidence Laue diffraction scheme are essentially more sensitive to structure distortions in surface layers of a crystal as compared to the conventional diffraction scheme in the Bragg geometry. A gas-flow proportional counter with a resolution as small as 16% used as photoelectron energy analyzer allows to establish the presence of disturbed layers with thicknesses ≈ 10 nm and less. Es wird gezeigt, daß die mittels stehender Röntgenwellentechnik im Laue-Beugungsfall bei streifender Inzidenz erhaltenen Photoemissionskurven gegenüber Strukturverzerrungen in den Oberflächenschichten eines Kristalls im Vergleich zum konventionellen Beugungsfall in Bragg-Geometrie wesentlich empfindlicher sind. Ein Gasfluß-Proportionalzähler mit einer Auflösung von 16%, der als Photoelektronenenergieanalysator benutzt wird, erlaubt die Feststellung von gestörten Schichten mit Dicken von ≈ 10 nm und darunter.
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