Abstract
A new method of analysis of the curves of diffraction reflection from crystals with a disturbed surface layer has been developed. The method is based on a possibility to reconstruct the function, describing the crystal structure, with the aid of an inverse Fourier transformation. It allows to determine directly from experimental data the profile of deformation ∆d(z)/d and the degree of disorder exp(-W(Z))of the disturbed layer. The proposed method gives an opportunity to study the uniqueness of the solution thus obtained. The method is used to study a disturbed layer structure of silicon single crystals irradiated with boron ions.
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