Abstract
In this study photoelectrical properties of heterojunctions based on transparent oxide semiconductors thin films are outlined. The structures consisted of thin films of TiO2 doped with V and Pd (n-type semiconductor) and TiO2 with Co and Pd (p-type semiconductor) on silicon were examined by means of current–voltage (I–V) measurements and the optical beam induced current (OBIC) method. I–V characteristics displayed a strong non-linear (diode-like) behavior of prepared heterojunctions. The OBIC examinations enable for the comprehensive analysis of photocurrent generated at the microregion of electrically active areas at the interface of fabricated heterojunctions.
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