Electrical and optical properties of TOS–S heterojunction devices

Abstract

Photoelectrical properties of heterojunctions based on transparent oxide semiconductor (TOS) thin films–semiconductor (S) are outlined. The structures consisted of transparent thin films of TiO2 doped with V and Pd (n-type semiconductor) and TiO2 with Co and Pd (p-type semiconductor) deposited by magnetron sputtering on standard silicon wafers (p-type and n-type respectively). The structures were examined by means of current–voltage (I–V) measurements and the Optical Beam Induced Current (OBIC) method. Temperature dependent I–V characteristics displayed a strong non-linear behaviour of prepared TOS–S heterojunctions.