Abstract
AbstractTransparent oxide semiconductors (TOSs) with specified type of electrical conduction allow fabrication of different kind of heterojunctions. Thin oxide films were deposited by modified low‐pressure hot‐target magnetron sputtering from metallic Ti–Eu–Pd and Ti–Tb–Pd mosaic targets on silicon wafers and glass substrates. XRD studies revealed a dominant TiO2‐rutile phase and a highly ordered nanocrystalline structure of the prepared thin films. Optical transmission measurements showed that Eu, Pd and Tb, Pd doping shifts the fundamental absorption edge of TiO2 to longer wavelength. Electrical properties were examined using current–voltage (I –V) measurements. Eu dopant results in n‐type and Tb dopant in p‐type electrical conduction of the prepared thin films. From I –V measurements a strong nonlinear (diode‐like) behavior was found and thus the formation of heterojunction at the interface of thin‐film silicon was confirmed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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