Abstract
Photoeffects in common-source and common-drain mode GaAs MESFET oscillators show that the common-source mode oscillator has an optical-frequency sensitivity approx. 5 times higher than that of the common-drain mode, principally caused by the oscillator frequency dependence upon C gs . Although the photoinduced frequency change can be duplicated by a small decrease (0.2–0.6 V) in gate bias voltage, 1 MHz capacitance data indicates that a change in the effective space charge density in the gate depletion layer (not a change in built-in voltage) is the source of the C gs variation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
