Abstract
A simple method was found to fabricate Cu/rGO/n-Cu2O photo-electrode to enhance the photocurrent with compared to the device Cu/n-Cu2O photo-electrode at semiconductor-electrolyte interface. Reduced graphene oxide (rGO) was fabricated on a well cleaned copper sheet using electro-phoretic deposition (EPD) technique to fabricate Cu/rGO. Thereafter Cu/rGO electrode was boiled in a 10-4M CuSO4 solution to fabricate Cu/rGO/n-Cu2O photo-electrode for the first time. Here The rGO acts as a good electron acceptor ton-Cu2O photo-generated electrons enhancing the charge separation process suppressing the recombination process of the photo-generated charge carriers.
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