Abstract
A layer of indium zinc oxide (IZO) was deposited on the n-type Si substrate clad with a thin thermally grown SiOx layer by pulsed laser deposition to form the semiconductor-insulator-semiconductor (SIS) hetero-junction which exhibits substantial photo-induced responses. Investigation on the IZO layer deposited at various temperatures indicated that IZO film grown at 250°C possesses a resistivity of 4.9×10−4Ωcm with the transmittance exceeding 80% in the wavelength range between near infrared to ultraviolet light. The photodetection device made of the SIS hetero-junction structure was found to exhibit the photoresponse (R) of 35AW−1 and 6.15AW−1 with a quick photo-response time less than 80ms under the illumination of visible light and ultraviolet light, respectively. The underlying mechanism for such a unique characteristic was attributed to the suppression of majority carrier tunneling resulted from the Schottky barrier established at the SIS interfaces.
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