Abstract
We have investigated electrical, optical, and structural properties of indium tin oxide (ITO) co-sputtered indium zinc oxide (IZO) film prepared by a dual target direct current (DC) magnetron sputtering at room temperature in pure Ar ambient. It was shown that the resistivity and sheet resistance of ITO co-sputtered IZO films monotonically increased with increasing DC power of ITO target at constant DC power of IZO target. Synchrotron X-ray scattering and scanning electron microscope examination results show that addition of ITO in the IZO film lead to crystallization of IZTO film due to low transition temperature of the ITO from amorphous to crystalline. However, ITO co-sputtered IZO film (ITO/IZO power = 100 W:100 W) exhibit higher work function than those of pure IZO and ITO film. It was found that the work function as well as the electrical, optical, and surface properties of the IZTO film could be controlled by varying the DC power of IZO and ITO targets, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
