Phosphorus diffusion in silicon during rapid thermal annealing

Abstract

A physical model for phosphorus diffusion in silicon during rapid thermal processing is developed based on the observed enhanced diffusivity in the presence of a relatively high concentration of interstitial dopant. For high dose implantation, the effect of amorphous-crystalline transformation upon the initial point defects distribution is considered. A pair of coupled nonlinear, partial differential equations for vacancy and self-interstitial assisted phosphorus diffusion is solved numerically, the theoretical results being in good agreement with the experimental data for annealing at temperatures between 950 and 1150 degrees C for 10-360 s.