The effect of concentration-dependent defect recombination reactions on phosphorus diffusion in silicon

Abstract

A previous model for phosphorus diffusion in silicon [J. Appl. Phys. 65, 2243 (1989)] is extended to include four additional reactions among substitutional phosphorus, silicon self-interstitials, vacancies, and phosphorus-defect pairs. All reaction rates in the model are based on physically plausible kinetic estimates. The numerical solution to the resulting system of eight coupled partial-differential equations yields profiles in good agreement with experiment.