Abstract
A longstanding challenge is the reduction of temperature in hot spots occurring in AlN-based ternary device structures. In this paper, we develop a uniaxial dielectric model and present theoretical analysis of the Frohlich interaction between electrons and interface and confined optical phonons, and their properties. This model is used to introduce new ways of achieving temperature reduction in hot spots in regions of elevated temperature in AlN- and InN-based electronic and optoelectronic devices.
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