Phonon transport in two-dimensional silicon thin film: influence of film width and boundary conditions on temperature distribution

Abstract

Radiative phonon transport in two-dimensional silicon thin film is considered and equivalent equilibrium temperature is analyzed for different boundary conditions at the film faces. The influence of the film thickness on phonon transport is also examined and limiting film thickness for two-dimensional phonon transport is demonstrated. It is found that the two-dimensional phonon transport reduces to one-dimensional transport for the film width more than or equal to the twice of the thickness of the silicon film. Equivalent equilibrium temperature predicted, agrees well with the previous findings.