Abstract
Abstract. Phonon transport in a two-dimensional thin silicon film is considered and the effect of heat source size and the film thickness on the transport characteristics is examined. Frequency dependent Boltzmann equation is incorporated in the analysis to account for the contribution of the ballistic phonons to the energy transport. Equivalent equilibrium temperature is introduced to assess the thermal resistance during the phonon transport in the film. The numerical scheme with the appropriate boundary conditions is used to predict the transport properties, including the effective thermal conductivity, of the thin film. It is found that the heat source size and the film thickness influence the thermal resistance of the film almost equally. The ballistic phonons reduce the film thermal resistance while suppressing the effective thermal conductivity in the thin film.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
