Abstract
The contribution of the phonon drag effect to the Seebeck coefficient of P-doped ultrathin Si-on-insulator (SOI) layers with a thickness of 9–100 nm is investigated for near-room-temperature applications. The contribution is found to be significant in the lightly doped region and to depend on the carrier concentration with increasing carrier concentration above ∼5 × 1018 cm−3. Moreover, the contribution is not influenced by SOI thickness above 9 nm. On the basis of phonon mean-free-path calculations considering phonon scattering processes, the phonon drag part of the SOI Seebeck coefficient in the lightly doped region is mainly governed by phonon-phonon scattering. Furthermore, in higher concentration regions, the dependence of phonon drag can be qualitatively explained by the interaction between phonons and doped impurities.
Published Version
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