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Abstract
Strong electric‐field‐induced enhancement of the thermal emission rate of holes from the doubly ionised charge state of the ΕL2 defect was revealed with the double‐correlation deep‐level transient spectroscopy in p‐type GaAs crystals of various crystallographic orientations. The observed enhancement, by over four orders of magnitude of the emission rate, was analysed in a model of phonon‐assisted tunnel ionisation. Similar dependences of the hole‐emission rate on the electric‐field intensity received for the electric‐field directions parallel to three main crystallographic axes evidence for tetrahedral symmetry of the defect, which is consistent with its identification as the isolated arsenic antisite defect.
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