Abstract
Strong electric-field enhancement of the thermal emission rate of holes from the doubly ionized charge state of the EL2 defect was revealed with the deep-level transient spectroscopy in p-type GaAs and analyzed in a model of phonon-assisted tunnel effect. Similar dependence observed for the electric field directions parallel to three main crystallographic axes suggests tetrahedral symmetry of the defect which is consistent with its identification as the arsenic antisite.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
