Abstract
Abstract The time variations of electron beam-induced currents through the Schottky contact on boron-doped p-type homoepitaxially grown diamond are analyzed in order to clarify the relationship between the decay in electron density and the hole emission at a boron acceptor level after removal of electron beam pulse. It is shown that the electron density varies with a time constant corresponding to the thermal emission rate of holes in the acceptor level, which means that electron beam-induced currents are dominated by the hole emission rate at the acceptor level.
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