Abstract
Combination of both phase-shifting mask technology and single layer top-imaging resist will allow deep-UV lithography to meet respectively 256 Mbit requirements and beyond. Using phase-shifting mask in conjunction with PRIME process, 0.175 μm lines and spaces have been resolved with an ASM-L PAS 5000/70 deep-UV (248 nm, NA=0.42) stepper on 0.85 μm thick PLASMASK 200G.
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