Abstract
Deep UV lithography using a trilevel resist system has been developed to delineate submicron patterns for magnetic bubble memory devices. The trilevel resist system consists of PIQ® as a bottom polymer layer, spin‐coated as an intermediate layer, and MRS as a top imaging resist. All these layers can be spun and baked sequentially. MRS resist patterns are defined by deep‐UV contact printing and transferred to layer and PIQ layer sequentially using reactive ion etching with gas for and gas for PIQ. Using this trilevel resist process, 0.4 μm lines and spaces were fabricated and contiguous disk patterns of 2 μm bit period for bubble memory devices of 16 Mb/cm2 were also fabricated successfully.
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