Abstract
A new dry developed high resolution positive working system: positive resist image by dry etching PRIME for e-beam and deep UV lithography is proposed. This system is derived from photolithographic diffusion enhanced silylating resist diffusion enhanced silylating resist (DESIRE) process. In this report, we present the advantages of a top imaging scheme for e-beam lithography: forward scattering and proximity effects are considerably minimized. Due to very high contrast (about 6), resolution limits were pushed down to 75 nm lines and spaces in 0.35 μm thick resist; holes of 0.2 μm in 1.2 μm thick resist were obtained. Under deep UV exposure, 0.2 μm lines and spaces in 0.7 μm thick resist were resolved with a mask aligner.
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