Abstract
A positive working system, using silylation and dry development has been proposed. This system called 'PRIME' (Positive Resist IMage by dry Etching) is dedicated to e-beam and deep UV lithography. Due to high contrast and top image scheme, a wide process latitude is obtained. However, the exposure does required for resist crosslinking is high. This dose is about 300 mj/cm2. So, in order to decrease it, resist formulations have been investigated such as chlorinated and chloromethylated novolaks, grafted p-tertiobutylphenol-formol novolak, polyhydroxystyrene and copolymers poly hydroxystyrene/poly(chlorinated or chloromethylated styrene) with deep UV sensitive groups. This paper will include synthesis of previously described resist formulations, ability of these formulations to deep UV crosslinking and preliminary results of their application to PRIME process.© (1991) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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