Phase Diagram of the In‐Ga‐As‐P Quaternary System and LPE Growth Conditions for Lattice Matching on InP Substrates

Abstract

The phase diagram of the In‐Ga‐As‐P quaternary system has been determined experimentally for several As isoconcentration sections at 600° and 650°C. The liquidus data were obtained by the seed dissolution technique, and the solidus data were determined from liquid phase epitaxial layers grown on substrates by using EPMA. Lattice constants of the quaternary solid solutions were measured by an x‐ray diffraction technique. The LPE growth conditions of exactly lattice‐matched layers on substrates were found from the results of the phase diagram and lattice constant measurements. The phase diagram was also calculated by using a simple solution model and was compared with experimental results.