Abstract

The pseudoquaternary phase diagram of the Ga-In-As-Sb quaternary system has been determined experimentally. The liquidus data were obtained by DTA, and the solidus data were determined by the liquid phase epitaxial method. This phase diagram and the study of composition variations in the epitaxial layers indicate that the Ga-In-As-Sb quaternary system can form the lattice-matched Ga x In 1- x As 1- y Sb y solid solutions on the GaSb and/or InAs binary compounds in the composition range of 0 ⩾ x < 0.3 and 0.6 < x ⩾ 1.0.

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