Abstract
Liquidus and solidus data are presented for the 650, 700, and 800 °C isotherms in the In-rich corner of the Ga-In-As ternary system. The step-grading technique has been applied to accommodate large lattice mismatch and thereby obtain extended solidus data up to 60% InAs. LPE has been used to grow eight successive step layers of Ga1−xInxAs on GaAs substrate material, and each one of these layers provides a solidus data point for this ternary. The present technique predicts the conditions for successful lattice matched growth of Ga1−xInxAs on InP substrates. The accurate knowledge of the solidus and liquidus isotherms resulted in epitaxial growth of Ga1−xInxAs (0<X<0.3) with quality better than that previously obtained by VPE and LPE techniques. The simple solution model, successfully applied before for limited solidus data, does not seem to be adequate for the present extended data.
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