Abstract
A perturbational, moments-of-the-Boltzmann-equation approach (PMBE) is used to obtain the impedance Z and propagation constant k of n+nn+ diode structures in an analytical fashion. Evaluation of Z and k is relatively inexpensive so that hundreds of distinct boundary conditions (BC), corresponding to a single set of interior device parameters, may be studied. Based on such PMBE analytically obtained BC results, a few of the more interesting BC cases could be simulated enlisting a large signal, time domain, spatially varying numerical code. An example of a PMBE computer run is provided for a 0.4 μm thick device with a donor doping density of 1015/cm3 in the 100–300 GHz frequency spectrum.
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