Abstract
We demonstrate a bottom up approach for the aligned epitaxial growth of Si quantum dots (QDs) on one-dimensional (1D) hafnium oxide (HfO2) ridges created by the growth of HfO2 thin film on single wall carbon nanotubes. This growth process creates a high strain 1D ridge on the HfO2 film, which favors the formation of Si seeds over the surrounding flat HfO2 area. Periodic alignment of Si QDs on the 1D HfO2 ridge was observed, which can be controlled by varying different growth conditions, such as growth temperature, growth time, and disilane flow rate.
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