Abstract
This article reports on the speed‐power tradeoffs between single‐ and double‐heterojunction AlInAs/GaInAs heterojunction bipolar transitor devices. Single‐heterojunction devices with ft=100 GHz and fmax=112 GHz have been demonstrated with a breakdown voltage BVceo=2.5 V. AlInAs collectors produce higher breakdown voltages, but reduced current gain bandwidth (e.g., ft=30 GHz/BVceo=7.5 V), which results in a limited ft‐BVceo product. Simulations of transient electron transport in the collector confirm that the low saturated velocity of AlInAs leads to long collector transit times. A significant improvement in the ft‐BVceo product can be made by using an InP collector (ft=70 GHz and BVceo=7 V).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
