Abstract
A quantum transport simulator based on a self-consistent solution of the Schrödinger equation within non-equilibrium Green’s function formalism and 2D Poisson equation for a bilayer graphene nanoribbon (bilayer GNR) field-effect transistor (FET) has been developed to examine the ballistic performance of a device. It is found that the lateral confinement employed in bilayer graphene to form the bilayer GNR largely increases the ON/OFF current ratios of FET without significantly degrading its ON current . On the other hand, the interlayer coupling considerably decreases the confinement-induced energy gap of the bilayer GNR and largely increases the of the narrow bilayer GNR FET at the cost of lower ratios in comparison with the GNR FET.
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