Abstract
The High Luminosity upgrade of the CERN-LHC (HL-LHC) demands for a new high-radiation tolerant solid- state pixel sensor capable of surviving fluencies up to a few 1016 particles cm2 at ∼3 cm from the interaction point. To this extent the INFN ATLAS-CMS joint research activity, in collaboration with Fondazione Bruno Kessler, is aiming at the development of thin n-in-p type pixel sensors for the HL-LHC. The R & D covers both planar and single-sided 3D columnar pixel devices made with the Si-Si Direct Wafer Bonding technique, which allows for the production of sensors with 100µm and 130µm active thickness for planar sensors, and 130µm for 3D sensors, the thinnest ones ever produced so far. First prototypes of hybrid modules bump-bonded to the present CMS readout chips have been tested in beam tests. Preliminary results on their performance before and after irradiation are presented.
Highlights
The High Luminosity upgrade of the CERN-LHC (HLLHC) demands for a new high-radiation tolerant solid-state pixel sensor capable of surviving fluencies up to a few 1016 particles/cm2 at ∼3 cm from the interaction point
The R&D covers both planar and single-sided 3D columnar pixel devices made with the Si-Si Direct Wafer Bonding technique, which allows for the production of sensors with 100 μm and 130 μm active thickness for planar sensors, and 130 μm for 3D sensors, the thinnest ones ever produced so far
Testbeam studies both of thin planar and 3D devices have been performed by the CMS collaboration at the Fermilab MTest area using the Captan based DAQ, together with the pixel telescope based on the PSI46 analog chip (100×150 μm2 cell size, 80 rows and 52 columns) [2]
Summary
The High Luminosity upgrade of the CERN-LHC (HLLHC) demands for a new high-radiation tolerant solid-state pixel sensor capable of surviving fluencies up to a few 1016 particles/cm at ∼3 cm from the interaction point. This is required to replace the current planar technology silicon detectors which, no matter which way they are operated, are limited by the degradation of the signal to noise ratio and, can be reliably employed up to few 1015 particles/cm in the best case. Candidate technologies which can withstand these very high fluences are thin planar or 3D columnar silicon pixel sensors. To the extent of increasing the signal by increasing the electric field, together keeping the bias voltage within normal operation
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