Abstract
The performance of planar silicon pixel sensors, in development for the ATLAS Insertable B-Layer and HighLuminosity LHC (HL-LHC) upgrades, has been examined in a series of beam tests at the CERN SPS facilities since 2009. Salient results are reported on the key parameters, including the spatialresolution, the charge collection and the charge sharing between adjacent cells, for different bulk materials and sensor geometries.Measurements are presented for n+-in-n pixel sensors irradiated with a range of fluences andfor p-type silicon sensors with various layouts from different vendors. All tested sensorswere connected via bump-bonding to the ATLAS Pixel read-out chip. The tests reveal that both n-type and p-type planar sensors are able to collect significant chargeeven after the lifetime fluence expected at the HL-LHC.
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