Abstract
This work examined a double gate Tunnel FET (DGTFET) employing a heterogeneous gate dielectric (HD) scheme and a drain pocket (DP) for analog/ RF applications. Two different gate dielectric HfO2 (εox = 21) and Al2O3 (εox = 10) are compared with DP-DGTFET (without HD) for ION, IAMB, Vth, SS, and ION/IOFF. It is observed that as the value of the dielectric constant increases, ION rises with the reduction in the width of the tunneling barrier at the source-channel interface. However, ION/IOFF ratio for Al2O3 based device is two orders of magnitude better than the device employing HfO2. Further RF performance figures of merits (FOMs) CG, UPG,fT, Fmax, Gma, and admittance parameters are also inspected for all devices under concern using TCAD simulations.
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