Abstract
The impact of Dual Metal work function over the Single Metal on the capacitance of the double gate Tunnel FET is explored in this paper. We have comparatively studied the capacitance and the transfer characteristics of Single Metal Double Gate (SMDG) and Dual Metal Double Gate (DMDG) Tunnel FET. In DMDG TFET we have found reduced gate capacitance (C gg ) due to the presence of metal of higher function near the drain. Since the contribution of Cgd in the Cgg is more as compared to C gs , miller capacitance reduces in DMDG TFETs.
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