Performance enhancement of Sb2Se3-based solar cell with IGZO and n-ZnO as electron transport layers

Abstract

Prototype of Antimony Selenide (Sb2Se3) solar cell having different electron transport layer (ETL) has been stimulated by solar cell capacitance simulator (SCAPS). The impact of two individual ETL layers i.e. Indium Gallium Zinc Oxide (IGZO) and n-type Zinc Oxide (n-ZnO) has been analysed and it is found that n-ZnO is best for ETL. n-ZnO, Sb2Se3, and CuO layers in a newly proposed structure have respective thicknesses of 50 nm, 300 nm, and 20 nm. To achieve the optimum performance of this prototype the acceptor concentration of CuO is taken as 1018 cm−2 and the donor concentration of n-ZnO is taken as 1020 cm−2. The defect density at Sb2Se3 and Sb2Se3/n-ZnO is taken as 1013 cm−2 and 1010 cm−2. It plays a crucial part in device performance. With the optimized structure, we get maximum power conversion efficiency (PCE) up to 31.72% (VOC=1.148 volts, JSC=48.30 mA/cm2 & FF=88.50%) with n-ZnO as an ETL layer. For effective results, defect density at both interfaces are taken 109 cm−2, and maximum efficiency is achieved. Numerical analysis of proposed structure has done and study of various parameters like thickness variation at absorber layer, series resistance and temperature variation, defect density, metal function, and interface density variation.