Abstract
Based on the InAlAs/InGaAs heterostructure doping-channel field-effect transistors (DCFETs), three co-integrated devices are demonstrated. After removing some material layers, the enhancement/depletion-mode devices and inverter logic were formed. The InAlAs/InGaAs co-integrated structures consist of an enhancement-mode device with single channel and two depletion-mode devices with double and triple channels, respectively. The insertion of an undoped large energy-gap layer between the metal gate and active channels can improve the gate breakdown voltage and turn-on voltage. Besides, by the studied integrated DCFETs two transfer characteristics are implemented for direct-coupled FET logic (DCFL) circuit applications as compared to the previous reports with only single logic transfer characteristic. Consequently, the integrated AlInAs/GaInAs DCFETs provide a promise for signal amplification and multiple inverter logic applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
