Abstract
High speed and low power dissipation devices are expected from future generation technology of Nano-electronic devices. Tunnel field effect transistor (TFET) technology is unique to the prominent devices in low power applications. To minimize leakage currents, the tunnel switching technology of TFETs is superior to conventional MOS FETs. The gate coverage area of different fin shape hybrid tunnel field-effect transistors is more impacted on electric characteristics of drive current, leakage current and subthreshold slope. In this paper design various fin patterns of hybrid TFET devices and shows on better performance as compared with other fin shape hybrid tunnel FET. The TCAD simulation tool is used to determine the characteristics of different fin shape tunnel FET.
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