Abstract
The influences of doping amounts of TiO2 on the structure and electrical properties of In2O3 films were experimentally studied. In this study, titanium-doped indium oxide (ITiO) conductions were deposited on glass substrate by the dual-target-type radio frequency magnetron sputtering (RFS) system under different conditions of Ti-doped In2O3 targets, from Ti-0.5 wt% to Ti-5.0 wt%, along with 10 mTorr and 300 W pressure of RF power control that was used as a cost-effective transparent electrochemiluminescence (ECL) cell. From this process, the correlation between structural, optical, and electrical properties is reported. It was found that the best 1.14×10−4 Ω cm of resistivity was from Ti-2.5 wt% with the highest carrier concentration (1.15 × 1021 cm-3), Hall mobility (46.03 cm2/V·s), relatively transmittance (82%), and ECL efficiency (0.43 lm·W-1) with well crystalline structured and smooth morphology. As a result, researchers can be responsible for preparing ITiO thin films with significantly improved microstructure and light intensity performance for the effectiveness of the display devices, as well as its simple process and high performance.
Highlights
The transparent conducting oxide (TCO) films have become of interest in the study of light-emitting materials because they have a high electrical conductivity and good transparency in the visible region
We focus on the use of titanium-doped indium oxide (ITiO) that was deposited on glass substrate by using the radio frequency (RF) magnetron sputtering method
In order to perform a systematic study, the detailed analysis of ITiO films deposited on the glass substrate was controlled with the different variation of Ti-doped In2O3 target from 0.5 wt% to 5.0 wt% and 10 mTorr and 300 W of RF power working pressure
Summary
The transparent conducting oxide (TCO) films have become of interest in the study of light-emitting materials because they have a high electrical conductivity and good transparency in the visible region. Among the conventional TCO films, indium tin oxide (ITO) films have been reported as TCO materials due to their good optical and electrical properties (resistivity about 10-4 Ω cm) [7, 8]. ITO materials are toxic and they more often than not lack flexibility and thermal stability To address these problems, a new alternative material to ITO was needed.
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