Abstract
Thin films of indium zinc oxide (IZO) were deposited on polyethylene terephthalate (PET) substrate with varying plasma power (from 100 W to 300 W) using the radio-frequency (RF) magnetron sputtering technique and electroluminescence (EL) devices. The IZO films that were obtained from this process were treated with oxygen plasma powers using the plasma-enhanced chemical vapor deposition (PECVD) system. After this treatment, the microstructural, electrical, and optical properties of IZO films were observed and reported. The result showed that the IZO/PET films was fabricated at the lowest resistivity ( 2.83 × 10 − 3 Ω · cm ), while the optical characterization displayed the maximum transmittance of 95% in the visible region with a smooth morphology and good crystalline structured, affected by the 300 W of plasma power with the optimum carrier concentration ( 4.93 × 10 21 c m − 3 ) and hall mobility (42.12 cm2/V·sec), respectively. The luminance properties and the EL efficiency were also investigated and shown a 300 W highest point of plasma power with 84 cd/m2 and 0.924 lm/W. The film properties were found responsible for producing and improving the performance of IZO/PET substrate, suitable for displaying the devices.
Highlights
Flexible display devices such as organic light-emitting electrochemical cell (OLEDs) and light-emitting diodes (LEDs) have become interesting to study because of their displayed characteristics toward lightness, thinness, and wide viewing angles [1, 2]
The significant point has been found at RF power 300 W which shows a greater characterization of uniform grain distribution and has a diameter of 50 nm resulting in the smooth chemical particles on the surface, and this condition can remove the unrelated chemical particles from the indium-doped zinc oxide (IZO) films [45]
On the other hand, when the plasma power is increased, IZO films displayed more consistent surface characteristics in the formation of columnar microstructure showing IZO films surface formation of granular structures with smaller grains size [46,47,48]. This is because the preparation of IZO films at higher plasma power is an effect on the atoms on high deposition, IZO atoms increasing kinetic energy, and high diffusion coefficient
Summary
Flexible display devices such as organic light-emitting electrochemical cell (OLEDs) and light-emitting diodes (LEDs) have become interesting to study because of their displayed characteristics toward lightness, thinness, and wide viewing angles [1, 2]. New light-emitting materials like electroluminescence (EL) panel have been considered as the best choice method for photoelectronic devices. This is because the light-emitting materials have unique advantages such as less limitation and simple device structure of electrode materials, as well as its ability to fabricate large-area devices [3, 4].
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