Abstract
The NiO films were sputtered by radio frequency (rf) magnetron sputtering at different oxygen partial pressures. The structures, electrical and optical properties of the NiO films were investigated. The resulting films were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and ultraviolet–visible spectrophotometer (UV). The electrical properties were measured by Hall system. The results show that the NiO films deposited at room temperature with the ratio of oxygen partial pressures varying from 0 to 80% develop only (200) preferred orientation and very high optical transmittances. The lowest resistivity of 2.368 Ω cm and highest carrier density of 2.235 × 1019 cm−3 could be obtained. Comparatively, the controllable electrical properties of the films can be achieved by the variation of crystal quality arises from the oxygen partial pressures.
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