Performance Analysis of SOI-Tunnel FET with AlxGa1-xAs Channel Material

Abstract

Background: Tunnel Field-effect transistor (TFETs) has appeared as a promising candidate due to its steep slope (SS<60 mV/dec), which can be used for low-power applications Objectives: Authors investigated AlxGa1-xAs as the channel material in Silicon-on-Insulator (SOI) TFETs and compared it to other existing channel materials, SiGe, Ge, Si, Ge, Strained Si, and GaAs. Methods: For the entire device study, the mole fraction x = 0.2 has been used in AlxGa1-xAs channel material. The direct energy bandgap for Al0.2Ga0.8As has been used because the mole fraction is less than 0.4. The Al0.2Ga0.8As-based device has been analyzed in terms of Direct Current (DC) and Alternating Current (AC) characteristics using the Synopsys TCAD tool. Results: The proposed device offers enhanced switching speed with a high on/off ratio of ~1012 and a steep subthreshold swing of 30 mv/dec As a channel material, Al0.2Ga0.8As also enhances the miller capacitance of the device, which is one of the essential requirements of the device performance. Conclusion: In next-generation devices, Al0.2Ga0.8As as channel material and TFET device based on this channel material act as a promising contender for low-power applications.