Performance Enhancement of Dielectric Engineered Doping Less InGaN Tunnel FET for Low Power Analog/Radio Frequency Applications

Abstract

This literature represents the design and analysis of III-Nitrite-based Doping-less Tunnel Field Effect Transistors (TFET). On-state current improvement at low supply voltage at the device level is very much essential for low-power circuit-level assessments. Proper bandgap and lower electron-effective mass-based materials are required for the development of high-performance TFET devices. In0.75Ga0.25N is a suitable material for TFET due to its low effective mass and high electron density of states without doping. Homojunction TFETs have been designed based on In0.75Ga0.25N and Silicon as channel material, respectively. The dielectric engineering has been performed. The proposed In0.75Ga0.25N doping less TFET with Heterogate dielectric (HfO2/Al2O3) at HfO2 length under the gate ( $${\text{L}}_{{{\text{HfO}}_{2} }}$$ ) of 20 nm exhibits better immunity to short channel effects. The analog/RF performances have been investigated and compared with the other devices. The proposed device provides an average sub-threshold slope of 16 mV/Dec, which is 67.3% lower than silicon-based doping-less TFET. At drain bias of 0.3 V, the proposed device offers the maximum cut-off frequency (fT) of 45.7 GHz and the maximum gain bandwidth product (GBP) of 21.8 GHz, which is much larger than other reported III-V material-based TFET devices. The improved device can be regarded as a suitable device for radio frequency applications with lower power dissipation.