Abstract
Understanding the effect of material choice and nanowire (NW) diameter on drive current and leakage current is critical for a NW band-to-band tunneling (BTBT) field-effect transistor (FET) in the cold carrier injection regime. This letter presents theoretical investigation on drive currents and leakage currents of prototypical InP NW BTBT FETs based on calculating the imaginary wave vector in the bandgap as a function of NW diameter. The tunneling current in InP NW BTBT FETs, which show potential for applications in high-speed, high-power electronic devices, is investigated as a function of NW diameter and electric field.
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