Performance analysis of dual gate-OTFT with variation in OSC thickness and channel length

Abstract

Organic electronics is attracting the interest of researchers and industries due to its feather weight, meager cost and mechanical flexibility. Many innovative techniques are anticipated for improving the operation of organic material based devices so that they can be used for high speed applications. One such method is usage of dual gate in the organic thin film transistors (DG-OTFT) that makes the organic devices robust. Dual gate structures have better performance in comparison with the single gate organic thin film transistors (SG-OTFT). In this research paper we have analyzed a DG-OTFT using pentacene as organic semiconductor (OSC) since it has high mobility and adequately high current on/off ratio. Subsequently, the performance parameter analysis of dual gate organic transistor is performed in terms of threshold voltage, drive current, subthreshold slope, current on/off ratio, mobility. Furthermore, comparison of dual gate mode with single gate mode (top and bottom both) is analyzed using organic module of Atlas 2-D numerical device simulator. Besides this, the effect of variation in OSC thickness and channel length is also carried out. It is observed that performance enhances with decrease in OSC thickness from 150nm to 80nm, whereas, length of the channel is varied from 50μm to 10μm at a step size of 10. We have observed that variation of OSC thickness does not affect much the performance of DG-OTFT, while, with 80% reduction in channel length the drive current improves by 83%.