Analytical modeling of low cost single and dual gate organic transistor and their parameters extraction

Abstract

This research paper analyzes the electrical behavior of single gate (SG) and dual gate (DG) organic thin film transistors (OTFTs). To better understand the device physics and conduction mechanism, an analytical model for drain current is derived incorporating the empirical parameters. The effect of two gate insulator capacitances along with depletion capacitance of the organic semiconductor active layer is incorporated. To validate the models, the OTFT in both structures is simulated and thus the analytical model parameters are compared with the simulation results. DG-OTFT exhibits improved performance by means of current, mobility, threshold voltage and transconductance than that of SG-OTFT. Consequently, a substantial improvement of 67%, 50%, 19% and 54%, respectively is observed. Realization of such improved performance device structure using organic materials demonstrates the possibility of producing low cost digital and analog circuits on the bendable substrates and thus establishes a stepping stone towards low cost flexible organic electronics.